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K4B4G0846C-BCK0 DRAM K4B4G0846C-BCK0 DRAM K4B4G0846C-BCK0 DRAM K4B4G0846C-BCK0 DRAM

Samsung
K4B4G0846C-BCK0 DRAM

Publish Date: Oct-12
The Samsung K4B4G0846C-BCK0 is a 4Gb DDR3 SDRAM manufactured at 26 nm, based on the half minimum pitch ("20nm generation"). The technology features capacitor-over-bitline DRAM cell arrays.


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