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K4B1G0846F-HCF8 K4B1G0846F-HCF8


Publish Date: Nov-09
The Samsung K4B1G0846F-HCF8 1Gb DDR3 SDRAM F die is organized as a 32 Mbit x 4 I/Os x 8 banks, 16 Mbit x 8 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1600 Mb/sec/pin (DDR3-1866) for general applications. The DDR3 device operates with a single 1.5 V ± 0.075 V power supply and 1.5 V ± 0.075 V VDDQ.

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